Submitted by: Submitted by chigonchen
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Category: Business and Industry
Date Submitted: 11/26/2015 07:01 AM
含氮四元材料GaAsSbN太陽能電池
目前成長樣品
C2013
|P+GaAsSb:N 100 nm,Be=896 ºC,~2e19/ cm3 |
|N GaAsSb:N 1000nm,Si=1180 ºC,~1e16/ cm3 |
|N+GaAsSb:N 500 nm,Si=1180 ºC,>1e19/cm3 |
|N+GaAs buffer 100nm,Si=1180 ºC,~1e19/cm3 |
|N+GaAs substrate |
C2021
|P+GaAsSb:N 100 nm,Be=896 ºC,~2e19/ cm3 |
|P GaAsSb:N 1000nm,Be=1180 ºC,~3.3e16/ cm3 |
|N+GaAsSb:N 500 nm,Si=1180 ºC,>1e19/cm3 |
|N+GaAs buffer 100nm,Si=1180 ºC,~1e19/cm3 |
|N+GaAs substrate |
C2022
|N+GaAsSb:N 100 nm,Si=1180 ºC,>1e19/ cm3 |
|P GaAsSb:N 500nm,Be=806 ºC |
|P+GaAsSb:N 100nm,Be=896 ºC, ~1e19/ cm3 |
|P+GaAs buffer 100nm,Be=896 ºC, ~1e19/ cm3 |
|P+GaAs substrate |
C2023
|N+GaAsSb:N 100 nm,Si=1180 ºC,>1e19/ cm3 |
|P GaAsSb:N 500nm,Be=806 ºC |
|P+GaAsSb:N 900nm,Be=896=>806 ºC build in field |
|P+GaAsSb:N 100nm,Be=896 ºC,~1e19/ cm3 |
|P+GaAs buffer 100nm,Be=896 ºC,~1e19/ cm3 |
|P+GaAs substrate |
C2050
|P+GaAsSb:N 100 nm,Be=896 ºC,~2e19/ cm3 |
|N GaAsSb:N 500nm,Si=970 ºC,~2e16/ cm3 |
|N+GaAsSb:N 900nm,Si=1180=>970ºC,build in field |
|N+GaAsSb:N 100 nm,Si=1180 ºC,~1e19/ cm3 |
|N+GaAs buffer 100nm,Si=1180 ºC,~1e19/ cm3 |
|N+GaAs substrate |
C2051
|P+GaAs:N 100 nm,Be=896 ºC,~2e19/ cm3 |
|N GaAsSb:N 500nm,Si=970 ºC,~2e16/ cm3 |
|N+GaAsSb:N 900nm,Si=1180=>970ºC,build in field |
|N+GaAsSb:N 100 nm,Si=1180 ºC,~1e19/ cm3 |
|N+GaAs buffer 100nm,Si=1180 ºC,~1e19/ cm3 |
|N+GaAs substrate |
結果與討論
第一部份(本質層雜質材料)...