Gan Semiconductor Device Market to Be Facilitated by Rising Demand for High Performing Devices

Submitted by: Submitted by

Views: 10

Words: 2666

Pages: 11

Category: Business and Industry

Date Submitted: 07/20/2015 05:41 AM

Report This Essay

Transparency Market

Research

GaN Semiconductor Devices Market - Global Industry

Analysis, Size, Share, Growth, Trends and Forecast

2013 – 2019

Published Date

2014-02-19

98 Page Report

Buy Now

Request Sample

Press Release

GaN Semiconductor Device Market to be Facilitated by Rising

Demand for High Performing Devices

Transparency Market Research

State Tower,

90, State Street, Suite 700.

Albany, NY 12207

United States

www.transparencymarketresearch.com

sales@transparencymarketresearch.com

GaN Semiconductor Devices

Market

REPORT DESCRIPTION

GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share,

Growth, Trends and Forecast 2013 – 2019

According to a new research publication by Transparency Market Research, the global GaN

semiconductor devices market that was valued at US$379.82 million in 2012, is estimated to

reach US$2,203.73 million by the end of 2019, registering growth at a remarkable CAGR of

24.6% during the forecast period of 2013 to 2019.

Browse the full GaN Semiconductor Devices Market press release report at

http://www.transparencymarketresearch.com/gallium-nitride.html

The report, titled β€œGaN Semiconductor Devices Market - Global Industry Analysis, Size, Share,

Growth, Trends and Forecast, 2013 - 2019”, states that North America emerged as the largest

market for GaN semiconductor devices in 2012, accounting for 32.1% of the overall market

share. However, Asia Pacific is projected to register the maximum growth rate of 27.7% during

the forecast period. The increase in demand for GaN semiconductor devices in the Asia Pacific

region will be fuelled by rapid industrialization in the electronics segment.

Gallium Nitride (GaN) is a hard semiconductor material used in the manufacture of

semiconductor devices. GaN has dynamic electrical and chemical properties such as high voltage

breakdown and saturation velocity that makes it a perfect choice for application across a wide

range of switching devices. GaN has been growing more in...