Gan Industrial Devices Market Is Expected to Reach Usd 1,315.0 Million in 2021

According to a new market report published by Transparency Market Research “GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021,” the market was valued at USD 481.8 million in 2014, which is expected to reach USD 1,315.0 million by 2021, growing at a CAGR of 15.1% from 2015 to 2021. By volume, global GaN Industrial Devices market is expected to grow at a CAGR of 17.5% during the forecast period from 2015 to 2021 to reach a market size of 3,427.2 million units by 2021. In 2014, volume of the market was 1,099.6 million units.

Browse the full GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 – 2021 report at

http://www.transparencymarketresearch.com/gan-industrial-devices-market.html

Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology and offer enhanced performance characteristics compared to other semiconductor devices such as Silicon (Si) and Gallium arsenide (GaAs). Due to high temperature resistivity, low power consumption, high breakdown voltage, better thermal stability and high electron mobility among others, GaN industrial devices are widely acknowledged by different industrial sectors as a green technology. GaN is expected to be the next generation power semiconductor and thus various countries are continuously indulged in widespread applications of GaN industrial devices. These devices are significantly used in automotive, defense, information and communication technology, military, aerospace and power distribution systems among others.

Moreover, GaN is broadly implemented in radio frequency devices, light-emitting diodes (LEDs) and power electronics, due to its ability to operate at high frequency and high temperature. Therefore, increasing applications of GaN based devices is primarily fuelling the expansion of the market. In addition, rapid advancement in GaN technology along with large scale of...